search for books and compare prices
Tables of Contents for Semiconductor Device and Failure Analysis
Chapter/Section Title
Page #
Page Count
Preface
xiii
Introduction
1
26
Device Technology Trends and Challenges to Failure Analysis
1
3
Integrated Circuit Yield, Defects and Reliability Issues
4
2
Photon Emission Microscopy of Silicon Devices
6
12
Photon emission microscopy as a fault localisation technique and classification of electrical leakage failures
6
2
Photon emission from failed devices and defects
8
3
Luminescence from biased p-n junctions and related structures
11
3
Hot-carrier luminescence
14
3
Electroluminescence from dielectric films
17
1
Photon Emission Microscopy of III-V Semiconductor and Other Devices
18
2
Modes of Operation in Photon Emission Microscopy
20
2
Summary
22
5
References
22
5
Theory of Light Emission in Semiconductors
27
16
Introduction
27
1
Radiative Recombination Rate and Efficiency
28
3
Radiative and Nonradiative Transitions
31
10
Interband direct and indirect transitions
32
2
Exciton recombination
34
1
Transition between a band and an impurity level
35
1
Intraband transition
35
2
Auger effect
37
1
Recombination through defects
38
2
Surface and interface recombination
40
1
Multiple-phonon emission
41
1
Summary
41
2
References
42
1
Instrumentation Aspects of the Photon Emission Microscope
43
24
Introduction
43
1
Photon Detection and Imaging
44
16
Vidicons
45
1
Microchannel plate image intensifiers
46
1
Charge-coupled devices and imaging arrays
47
7
Near-infrared and infrared photon detectors
54
5
Photon counting
59
1
Optical Design Considerations
60
2
Qualitative Imaging Modes in Photon Emission Microscopy
62
1
Spectral Analysis Using Optical Filters and Monochromators
63
1
Summary
63
4
References
64
3
Backside Photon Emission Microscopy
67
14
Introduction
67
1
Factors Affecting Backside Photon Imaging
68
7
Optical absorption
68
2
Electrooptical effects
70
2
Doping concentration effect
72
1
Surface roughness scattering
73
1
Spherical aberration effect
74
1
Backside Sample Preparation Techniques
75
3
Global sample thinning
75
1
Localised sample thinning
76
2
Navigation Tools in Backside Analysis of Failed Devices
78
1
Summary
78
3
References
79
2
Spectroscopic Photon Emission Microscopy
81
26
Introduction
81
1
Alternative Methods for Spectroscopic Photon Emission Analysis
82
1
Optical Elements Used in Spectroscopic Analysis
83
3
Optical filters
83
1
Monochromators
84
1
Wavelength-dispersive prism, focusing lens and position-sensitive detector
85
1
Calibration for Spectroscopic Measurements
86
5
Need for calibration
86
1
Wavelength calibration
87
1
System response calibration
87
4
Spectral Normalisation Schemes
91
3
Bias-dependent spectral variations and the need for spectral normalisation
91
1
Area normalisation and the λ1.0 wavelength characterisation parameter
92
1
Cumulative area normalisation and the λ50% wavelength characterisation parameter
93
1
Results of Spectral Normalisation
94
10
Normalised spectra of biased p-n junctions
95
1
Normalised spectra of n-channel MOS transistors
96
3
Bias-dependence of the wavelength parameters
99
3
Distribution of the wavelength parameters and relation to device electric fields
102
2
Summary
104
3
References
105
2
Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing
107
66
Introduction
107
1
Hot-Carrier Effects in MOSFETs
108
24
Channel electric field
108
2
Substrate current model
110
2
Hot-carrier injection mechanisms
112
1
Channel hot-electron injection
113
2
Drain-avalanche hot-carrier injection
115
2
Secondarily generated hot-electron injection
117
2
Substrate hot-carrier injection
119
1
Fowler-Nordheim tunnelling injection
120
1
Direct tunnelling injection
120
1
Hot-carrier injection in p-channel MOSFETs
121
1
Hot-carrier degradation effects and bias dependency
121
1
Hot-carrier degradation in n-channel MOSFETs
121
2
Hot-carrier degradation in p-channel MOSFETs
123
3
Hot-carrier stress testing and device lifetime
126
2
Hot-carrier-resistant device structures
128
1
Drain-engineered hot-carrier-resistant device structures
129
2
Gate-oxide engineering for improved hot-carrier reliability
131
1
Spectral Characteristics of Photon Emission from MOSFETs
132
13
Light absorption in the gate
132
2
Bias-dependent spectral charcteristics
134
2
Photon and electron energy distributions
136
4
Substrate current dependence of total emission intensity
140
5
A Theoretical Treatment of Photon Emission from MOSFETs
145
7
The photon emission model based on the bremsstrahlung radiation mechanism
145
3
Discussion on the bremsstrahlung photon emission model and alternative models
148
4
Photon Emission and MOSFET Degradation under Hot-Carrier Stressing
152
13
Effect of different hot-carrier stressing conditions on photon emission
154
3
Effect of different drain-engineered structures on photon emission
157
4
Spectral analysis and discussion
161
4
Summary
165
8
References
167
6
Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing
173
36
Introduction
173
1
Electrostatic Discharge (ESD) Stress and Device Operation
174
10
ESD models and failure mechanisms
175
2
Transistor operation under ESD conditions
177
1
MOS transistor
177
3
Thick field-oxide device
180
1
Silicon-controlled rectifier
181
1
ESD protection circuitry in MOS devices
182
1
Input protection with thick field-oxide device
183
1
Input protection with silicon-controlled rectifier
183
1
Transmission Line Pulsing Set-Ups for High-Field Impulse Stressing
184
7
Single-pulsing transmission line set-up
185
1
Continuous-pulsing transmission line set-up
186
1
Test device description and biasing conditions
187
1
Current-voltage characteristics of grounded-gate nMOSFETs
188
3
Photon Emission from N-Channel MOSFETs in the Snapback Breakdown Region
191
7
Light emission from grounded-gate nMOSFETs biased into snapback breakdown
191
2
Photon emission spectroscopy of grounded-gate nMOSFETs biased into snapback breakdown
193
2
Distribution of the wavelength parameters and relation to device electric fields
195
2
Device degradation during measurement
197
1
Total Photon Emission Intensity and Carrier Temperature
198
6
Total photon emission intensity
198
2
Photon energy distribution
200
2
Carrier temperature
202
2
Summary
204
5
References
204
5
Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures
209
54
Introduction
209
1
Degradation and Breakdown of Silicon Dioxide
210
21
Oxide breakdown models
212
1
Hole-induced breakdown model
212
3
Electron-trapping model
215
2
Interface-softening model
217
3
Other oxide breakdown models
220
3
Microscopic models of oxide damage
223
2
Measurement techniques for oxide breakdown
225
1
Constant-voltage stress
226
1
Constant-current stress
226
1
Charge-to-breakdown
227
1
Soft breakdown of ultra-thin gate oxides
228
3
Electrical Behaviour of MOS Capacitors under High-Field Impulse Stressing
231
20
Current-time and capacitance-voltage characteristics
233
1
Trap generation under high-field impulse stress
234
14
Polarity effect of the high-field impulse stress
248
1
Latent damage
249
2
Spectral Characteristics of Photon Emission from MOS Capacitors
251
5
Photon emission under depletion/inversion bias
253
1
Photon emission under accumulation bias
254
2
Summary
256
7
References
257
6
Index
263