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Tables of Contents for Lecture Notes on Principles of Plasma Processing
Chapter/Section Title
Page #
Page Count
Plasma Physics
Part A1: Introduction to Plasma Science
What is a plasma?
1
2
Plasma fundamentals
3
8
Quasineutrality and Debye length
Plasma frequency and acoustic velocity
Larmor radius and cyclotron frequency
E x B drift
Sheaths and presheaths
Part A2: Introduction to Gas Discharges
Gas discharge fundamentals
11
14
Collision cross section and mean free path
Ionization and excitation cross sections
Coulomb collisions; resistivity
Transition between neutral- and ion-dominated electron collisions
Mobility, diffusion, ambipolar diffusion
Magnetic field effects; magnetic buckets
Cross section data
21
4
Part A3: Plasma Sources I
Introduction to plasma sources
25
6
Desirable characteristics of plasma processing sources
Elements of a plasma source
Part A4: Plasma Sources II
RIE discharges
31
68
Debye sheath
Child-Langmuir sheath
Applying a DC bias
Applying an RF bias
Displacement current
Ion dynamics in the sheath
Other effects in RIE reactors
Disadvantages of RIE reactors
Modified RIE devices
Plasma Chemistry
Part B1: Overview of Plasma Processing in Microelectronics Fabrication
Plasma processing
99
1
Applications in Microelectronics
100
3
Part B2: Kinetic Theory and Collisions
Kinetic theory
103
6
Practical gas kinetic models and macroscopic properties
109
10
Maxwell-Boltzmann distribution (MBD)
A simplified gas model (SGM)
Energy content
Collision rate between molecules
Mean free path
Flux of gas particles on a surface
Gas pressure
Transport properties
Gas flow
Collision dynamics
119
6
Collision cross sections
Energy transfer
Inelastic collisions
Part B3: Atomic Collisions and Spectra
Atomic energy levels
125
1
Atomic collisions
126
3
Excitation processes
Relaxation and recombination processes
Elastic collisions
129
1
Coulomb collisions
Polarization scattering
Inelastic collisions
130
Constraints on electronic transitions
Identification of atomic spectra
A simplified model
Part A5: Plasma Sources III
ECR sources
47
2
Inductively coupled plasmas (ICPs)
49
12
Overview of ICPs
Normal skin depth
Anomalous skin depth
Ionization energy
Transformer coupled plasmas (TCPs)
Matching circuits
Electrostatic chucks (ESCs)
Part A6: Plasma Sources IV
Helicon wave sources and HDPs
61
8
Dispersion relation
Wave patterns and antennas
Mode jumping
Modified skin depth
Trivelpiece-Gould modes
Examples of helicon measurements
Commercial helicon sources
Discharge equilibrium
69
6
Particle balance
Energy balance
Electron temperature
Ion temperature
Part A7: Plasma Diagnostics
Introduction
75
1
Remote diagnostics
75
4
Optical spectroscopy
Microwave interferometry
Laser Induced Fluorescence (LIF)
Langmuir probes
79
58
Construction and circuit
The electron characteristic
Electron saturation
Space potential
Ion saturation current
83
7
Distribution functions
90
47
RF compensation
Double probes and hot probes
Part B4: Molecular Collisions and Spectra
Molecular energy levels
137
2
Electronic energy level
Vibrational energy level
Rotational energy level
Selection rule for optical emission of molecules
139
1
Electron collisions with molecules
140
2
Frank-Condon principle
Dissociation
Dissociative ionization
Dissociative recombination
Dissociative electron attachment
Electron impact detachment
Vibrational and rotational excitation
Heavy particle collisions
142
1
Gas phase kinetics
143
8
Part B5: Plasma Diagnostics
Optical emission spectroscopy
151
10
Optical emission
Spectroscopy
Actinometry
Advantages/disadvantages
Application: end-point detection
Laser induced fluorescence
161
1
Laser interferometry
162
1
Full-wafer interferometry
163
1
Mass spectrometry
164
3
Part B6: Plasma Surface Kinetics
Plasma chemistry
167
1
Surface reactions
167
10
Spontaneous surface etching
Spontaneous deposition
Ion sputtering kinetics
Ion-enhanced chemical etching
Loading
177
1
Selectivity
178
1
Detailed reaction modeling
179
Other local diagnostics
93
90
Magnetic probes
Energy analyzers
RF current probe
Plasma oscillation probe
Part B7: Feature Evolution and Modeling
Fundamentals of feature evolution in plasma etching
183
2
Predictive modeling
185
1
Mechanisms of profile evolution
186
4
Ion bombardment directionality
Ion scattering within the feature
Deposition rate of passivants
Line-of-sight redeposition of products
Charging of surfaces in the features
Profile simulation
190
3
Plasma damage
193
6
Contamination
Particulates
Gate oxide Damage -- photon
Gate oxide damage -- electrical stress
Lattice damage
Post-etch corrosion
Epilogue: Current Problems in Semiconductor Processing
199
1
Front-end challenges
199
2
High-k dielectrics
Metal gates
Back-end challenges
201
3
Copper metalllization
Interlayer dielectrics (ILDs)
Barrier materials
Patterning nanometer features
204
1
E-beam
Resist trimming
Deep reactive etch for MEMS
205
1
Plasma-induced damage
206
1
Species control in plasma reactors
207