Preface

Electron centenary symposium

The materials basis behind the telecommunications revolution (invited)

W F Brinkman

The evolution of electron beam lithography and metrology for semiconductor technologies (invited)

T Matsuo

High resolution microscopy and nanoscale analysis

The structures of extended defects in Si and other materials studied by HRTEM (invited)

S Takeda

Defect structure of InSb grown within a synthetic opal matrix

V N Bogomolov

J L Hutchison

S M Samoilovich

D A Kurdyukov

J Sloan

L M Sorokin

G Wakefield

Strain determination in mismatched semiconductor heterostructures by the digital analysis of lattice images

A Rosenauer

T Remmele

U Fischer

A Forster

D Gerthsen

New intermediate defect configuration in Si studied by in situ HREM irradiation

L Fedina

A Gutakovskii

A Aseev

J Van Landuyt

J Vanhellemont

A study of interdiffusion and germanium segregation in low-pressure chemical vapour deposition of SiGe/Si quantum wells

T Walther

C J Humphreys

A G Cullis

D J Robbins

In-situ HREM irradiation study of point defect clustering in strained Ge(x)Si(1-x)/(001)Si heterostructure

L Fedina

O Lebedev

G Van Tendeloo

J Van Landuyt

Structural characterisation of MnSb/GaAs and MnSb/Si heterostructures grown by hot-wall epitaxy

H Tatsuoka

P D Brown

Y Xin

K Isaji

H Kuwabara

Y Nakanishi

T Nakamura

H Fujiyasu

C J Humphreys

Atomic modelling and HREM-imaging of dislocations associated with steps at Si/Si(001) vicinal interfaces

A Y Belov

D Conrad

K Scheerschmidt

U Gosele

The characterisation of ultrathin doping layers in semiconductors using high-angle annular dark-field imaging

C P Liu

C B Boothroyd

P D Brown

C J Humphreys

Electron diffraction from cross-sectional semiconductor heterointerfaces using subnanometer electron probes

A Radefeld

H Lakner

The use of electron holography for composition profiling of semiconductor heterostructures

P A Midgley

J Barnard

D Cherns

Dislocations and boundaries

Imaging dislocation kinks, their motion and pinning in Si (invited)

J C H Spence

H R Kolar

H Alexander

Analytical expression for the kink profile

M E Polyakov

Domain boundaries in epitaxial GaN grown on {111}B GaAs and GaP by molecular beam epitaxy

Y Xin

P D Brown

T S Cheng

C T Foxon

C J Humphreys

Basal and non-basal dislocations in deformed aluminium nitride

V Feregotto

A George

J P Michel

Structure of the GaAs/InP interface obtained by wafer fusion

G Patriarche

F Jeannes

J L Oudar

F Glas

Influence of light illumination on the rosette microstructure in indented GaAs and the photoplastic effect

S Koubaiti

J J Couderc

C Levade

G Vanderschaeve

Epitaxial layers: defect behaviour and strain relief

Dislocation behaviour in strained layer interfaces (invited)

P J Goodhew

G MacPherson

A mechanism for "double half dislocation loops" nucleation in low misfit epitaxial Ge(x)Si(1-x) on Si

P B Hirsch

Controlling misfit dislocation generation in strained layer epitaxy by point defect injection

M B Stirpe

D D Perovic

H L Lafontaine

R D Goldberg

Defect distribution in compositionally graded epitaxial SiGe layers on Si substrates

K Lyutovich

F Ernst

F Banhart

I Silier

A Gutjahr

M Konuma

On the growth of high quality relaxed Si(1-x)Ge(x) layers on Si by vapour phase epitaxy

A J Pidduck

D J Robbins

D Wallis

G M Williams

A C Churchill

J P Newey

C Crumpton

P W Smith

Relaxation of strained epitaxial layers by dislocation rotation, reaction and generation during annealing

R Beanland

M A Lourenco

K P Homewood

Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers

L Lazzarini

C Ferrari

S Gennari

A Bosacchi

S Franchi

M Berti

A V Drigo

F Romanato

G Salviati

The stacking faults in GaSb/(001)GaAs heterostructure

A M Rocher

Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers

K K Fung

N Wang

I K Sou

Global plastic relaxation of strained-layer superlattices with non-compensated strains

G Patriarche

E V K Rao

A Ougazzaden

F Glas

Critical thickness of quantum-well structures: modified Matthews-Blakeslee formula and experimental support gathered by means of synchroton x-ray reflection topography

P Mock

B K Tanner

G Lacey

C R Whitehouse

G W Smith

Crack interactions in tensile-strained epilayers

R T Murray

C J Kiely

M Hopkinson

Epitaxial layers: wide-bandgap nitrides

Structural characterisation of GaN layers: influence of polarity and strain release (invited)

J-L Rouviere

M Arlery

A Bourret

Polarity study by CBED of GaN films grown on (0001)(Si) 6H-SiC

P Vermaut

P Ruterana

G Nouet

A Salvador

H Morkoc

The analysis of nanopipes and inversion domains in GaN thin films

D Cherns

W T Young

M A Saunders

F A Ponce

S Nakamura

HREM study of the {1010} inversion domains in GaN grown on (0001) sapphire substrates

V Potin

P Ruterana

G Nouet

A Salvador

H Morkoc

Growth of GaN layers on nitrided GaAs/Si and GaAs/SIMOX composite substrates by OMVPE

Chimin Hu

N T Nuhfer

S Mahajan

J W Yang

C J Sun

M Asif Khan

H Temkin

Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence

G Salviati

C Zanotti-Fregonara

M Albrecht

S Christiansen

H P Strunk

M Mayer

A Pelzmann

M Kamp

K J Ebeling

M D Bremser

R F Davis

Y G Shreter

Heteroepitaxy of cubic GaN: influence of interface structure

A Trampert

O Brandt

H Yang

B Yang

K H Ploog

Highly spatially resolved electron energy loss spectroscopy in the bandgap regime

U Bangert

A Harvey

R Keyse

D Freundt

Developing a methodology for the electron energy-loss spectroscopy of defects in GaN

M K H Natusch

G A Botton

C J Humphreys

Probing the effect of defects on band structure in GaN

D M Tricker

M K H Natusch

C B Boothroyd

Y Xin

P D Brown

T S Cheng

C T Foxon

C J Humphreys

STEM characterisation of MOVPE-grown (In, Ga) N quantum wells

G Brockt

C Mendorf

A Radefeld

F Scholz

H Lakner

TEM characterisation of GaN grown on sapphire

B Pecz

M A di Forte-Poisson

L Toth

G Radnoczi

On the microstructure of GaN buffer layers grown at low temperatures on (0001) sapphire

H Selke

S Einfeldt

U Birkle

D Hommel

P L Ryder

Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire

A Mohammed

C Trager-Cowan

P G Middleton

K P O'Donnell

W Van Der Stricht

I Moerman

P Demeester

Epitaxial layers: general growth phenomena

Mechanisms of strain-induced surface ripple formation and dislocation multiplication in Si(x)Ge(1-x) thin films (invited)

D E Jesson

K M Chen

S J Pennycook

T Thundat

R J Warmack

Kinetic critical thickness for morphological instability in GeSi/Si strained layer epitaxy

B Bahierathan

D D Perovic

H Lafontaine

Decomposition analysis of Ga(x)In(1-x)As(y)P(1-y) heterostructures by STEM

C Mendorf

G Brockt

Q Liu

F Schulze

E Kubalek

I Rechenberg

A Knauer

A Behres

M Heuken

K Heime

H Lakner

Investigations of ordering in AlGaInP

A Dunbar

S Hall

M Halsall

U Bangert

Structural characteristics of highly ordered (GaIn)P

J C Jiang

A K Schaper

Z Spika

W Stolz

P Werner

L Toth

The effect of substrate misorientation on atomic ordering in Ga(0.52)In(0.48)P epilayers grown on GaAs (001) substrates by gas-source MBE

C Meenakarn

A E Staton-Bevan

M D Dawson

G Duggan

A H Kean

S P Najda

Study of the structural and optical properties of ordered domains in GaInP alloys

L Nasi

F Fermi

C Ferrari

L Francesio

L Lazzarini

C Zanotti-Fregonara

S Pellegrino

G Salviati

TEM and TED studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxy

J H Kim

T Y Seong

Y S Chun

G B Stringfellow

TED, TEM and AFM studies comparing atomic ordering in InAs(y)Sb(1-y) layers grown by MOVPE and MBE

T Y Seong

G R Booker

A G Norman

P J F Harris

G B Stringfellow

Twinning of As precipitates in LT-GaAs

Ch Dieker

S Ruvimov

H Sohn

J Washburn

Z Liliental-Weber

Features of excess arsenic precipitation in LT-GaAs delta-doped with indium

N A Bert

V V Chaldyshev

Yu G Musikhin

P Werner

Transmission electron microscopy, x-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructures

J Katcki

K Reginski

M Bugajski

J Adamczewska

W Lewandowski

J Ratajczak

W Rzodkiewicz

J A Kozubowski

Transmission electron microscopy investigation of FeAs precipitates in GaAs/AlGaAs heterostructures

J Katcki

M Shiojiri

T Isshiki

K Nishio

Y Yabuuchi

N Y Jin-Phillipp

Characterisation of InPSb layers on different substrates (InAs or GaSb)

C Mendorf

G Brockt

A Behres

C von Eichel-Streiber

M Heuken

K Heime

H Lakner

TEM and HRXRD study of high strain InAlGaAs heterolayers

Yu G Musikhin

N A Bert

N N Faleev

A TEM study of Cu-In-Se thin films grown by molecular beam epitaxy

S B Lin

G L Gu

B H Tseng

Structural investigations of epitaxial CdMgSe/InAs(001) heterostructures

Th Walter

D Gerthsen

Th Litz

A Waag

G Landwehr

Transmission electron microscopy investigations of an epitaxial beryllium-chalcogenide-based superlattice

Th Walter

A Rosenauer

D Gerthsen

F Fischer

R Gall

Th Litz

A Waag

G Landwehr

Growth of SiC layers on off-axis 4H-SiC substrates

B Pecz

L Toth

G Radnoczi

C Hallin

E Janzen

Self-organised and quantum domain structures

Self-organisation and defect mechanisms in heteroepitaxial growth (invited)

H P Strunk

M Albrecht

S Christiansen

W Dorsch

Self-organisation processes in InSb quantum dots grown on InP(001) by ALMBE

J C Ferrer

F Peiro

A Cornet

J R Morante

T Utzmeier

G Armelles

F Briones

TEM and PL studies of self-assembling quantum dots

N Y Jin-Phillipp

M K Zundel

F Phillipp

K Eberl

Strain-induced vertical ordering effects of islands in LPCVD-grown Si(1-x)Ge(x)/Si-bilayer structures on Si(001)

K Tillmann

B Rahmati

H Trinkaus

W Jager

A Hartmann

R Loo

L Vescan

K Urban

TEM assessment of the growth mode and strain state of capped InSb dots grown on InP (001) substrates

J C Ferrer

F Peiro

A Cornet

J R Morante

T Utzmeier

G Armelles

F Briones

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices

A G Norman

N J Mason

M J Fisher

J Richardson

A Krier

P J Walker

G R Booker

Microstructual characterisation of CdSe quantum dots prepared by various routes

R R Nayak

J R Galsworthy

P J Dobson

J L Hutchison

Application of the 113 weak beam imaging technique to the investigation of strain-induced InAs islands grown on InP and GaAs(001) by MBE

A Ponchet

D Lacombe

Impact of the threading dislocations and residual stress on InAs islands grown on a (001) GaAs-on-Si pseudo-substrate relative to growth on standard GaAs

D Lacombe

A Ponchet

J M Gerard

Microstructure study of GaAs quantum wire superlattice

H Matsuhata

X-L Wang

M Ogura

Electron microscopy characterization of low-dimensional semiconductor structures grown on V-grooved substrates

A Gustafsson

G Biasiol

B Dwir

F Reinhardt

E Kapon

Quantitative analysis of Al(1-x)Ga(x)As heterostructures using EELS

K Leifer

P A Buffat

Orientation dependent growth of TmAs wires in GaAs grown by MBE

A C Wright

M R Bennett

K E Singer

TEM and HREM structural studies of non-lithographically-produced CdS nanowires

J L Hutchison

D Routkevitch

A Albu-Yaron

M Moskovitz

R R Nayak

Processed silicon, diamond and specimen preparation methods

TEM studies of processed Si device materials (invited)

J Vanhellemont

H Bender

J Van Landuyt

Two-and three-dimensional characterisation of advanced LOCOS isolation using transmission electron microscopy

R Beanland

D J Bazley

S K Jones

B Scaife

Improved epitaxial quality following etch damage removal on plasma etched silicon surfaces

J M Bonar

J Schiz

P Ashburn

The effects of fluorine on the epitaxial regrowth of arsenic-doped amorphous silicon and polysilicon and of chlorine on the epitaxial regrowth of arsenic-doped polysilicon

C D Marsh

N E Moiseiwitsch

G R Booker

P Ashburn

Effects of static disorder on LACBED patterns of single crystal silicon implanted with hydrogen

S Frabboni

F Gambetta

R Tonini

R Balboni

A Armigliato

TEM characterisation of carbon ion implantation into epitaxial Si(1-x)Ge(x)

A Romano-Rodriguez

A Perez-Rodriguez

C Serre

L Calvo-Barrio

A Bachrouri

O Gonzalez-Varona

J R Morante

R Kogler

W Skorupa

Polycrystalline silicon grain structure in VLSI devices

R Lindsay

J N Chapman

A J Craven

D McBain

Structural and electronic properties of partially crystallised silicon

P D Brown

J P Smith

W Eccleston

C J Humphreys

Microstructure study of pure hydrogen RF-sputtered microcrystallized silicon thin films

F Gourbilleau

A Achiq

P Vermaut

P Voivenel

R Rizk

The effect of doping and formation conditions on the microstructure of porous silicon

G Wakefield

J L Hutchison

P J Dobson

Temperature mapping of polysilicon-microheaters using Raman micro-spectroscopy

M Bowden

D J Gardiner

A A Parr

R T Carline

R J Bozeat

R J T Bunyan

M Ward

Development of a mechanical polysilicon layer for surface machined microelectromechanical systems using TEM, SEM, and Raman spectroscopy

D O King

M C Ward

A G Cullis

D Gardiner

M Bowden

Dislocation structure in interfaces of bonded hydrophobic silicon wafers: experiment and molecular dynamics

M Reiche

K Scheerschmidt

D Conrad

R Scholz

A PloBl

U Gosele

K N Tu

Interfaces of CVD diamond films on silicon (001)

D Wittorf

W Jager

C L Jia

K Urban

A Floter

H Guttler

R Zachai

Synchrotron x-ray reticulography: a versatile new technique for mapping misorientations in single crystals

A R Lang

A P W Makepeace

The use of transmitted color and interference fringes for TEM sample preparation of silicon

J P McCaffrey

Cross-sectional transmission electron microscopy and focused ion beam study of advanced silicon devices

H Bender

P Roussel

Preparing TEM sections by FIB: stress relief to straighten warping membranes

J F Walker

Surface damage of semiconductor TEM samples prepared by focused ion beams

J F Walker

R F Broom

Ion energy effect on surface amorphisation of semiconductor crystals

A Barna

L Toth

B Pecz

G Radnoczi

The effects of surface relaxation and ion thinning on XXX-doped semiconductor cross-sections

C P Liu

P D Brown

C B Boothroyd

C J Humphreys

Silicides and contacts

Practical epitaxial silicide technologies for ULSI applications (invited)

R T Tung

K Inoue

Micro-characterisation of Pt-silicides prepared on (100) silicon

S Jin

H Bender

R A Donaton

K Maex

In situ TEM study of the evolution of CoSi(2) precipitates during annealing and ion irradiation

M Palard

M-O Ruault

H Bernas

M Strobel

K-H Heinig

Heteroepitaxial Si/ErSi(2)/Si structures grown in high vacuum

A Travlos

E Flouda

A Aloupogiannis

N Salamouras

Radiation enhanced diffusion of ion implanted Fe in Si (100) observed in ion beam synthesis of Beta-FeSi(2)

Y Maeda

T Fujita

K Umezawa

K Miyake

Application of image filtering to semiconductor structures

P L Flaitz

A Domenicucci

Tungsten and tungsten nitride Schottky contacts to 4H-SiC

B Pecz

A Sulyok

G Radnoczi

O Noblanc

C Arnodo

S Cassette

C Brylinski

Bulk compounds

Distribution of Fe and extended defects in Fe-implanted InP

C Frigeri

A Carnera

B Fraboni

A Gasparotto

F Priolo

A Camporese

G Rossetto

Influence of doping on the native acceptors of gallium antimonide

P Hidalgo

B Mendez

J Piqueras

P S Dutta

E Dieguez

Effect of high implantation temperatures on defect formation in 6H-SiC

A A Suvorova

O I Lebedev

A V Suvorov

I O Usov

X-ray topography of single crystal zinc germanium phosphide

M K Saker

A M Keir

A W Vere

L L Taylor

Electronic devices

Mechanisms of breakdown in semi-insulating GaAs detectors under high reverse bias conditions studied by EBIC and OBIC

M Mazzer

A Cola

L Vasanelli

M De Vittorio

C Pennetta

L Reggiani

The impact of structural non-uniformity on the operation of (Al(y)Ga(1-y))(x)In(1-x)P quantum well lasers at high strain

P C Mogensen

S A Hall

U Bangert

P Dawson

P M Smowton

P Blood

EBIC and TEM investigations of laser heterostructures grown on linearly-graded and step-graded buffer layers

M J Romero

F J Pacheco

D Gonzalez

T C Rojas

D Araujo

S I Molina

R Garcia

TEM observation of degraded InGaAsP MQW laser diodes

T Matsuda

T Namegaya

A Kasukawa

Y Ikegami

N Tsukiji

T Ijichi

F Iwase

Atomic processes at the laser front facet during laser operation

I Rechenberg

U Richter

A Klein

W Hoppner

J Maege

G Beister

M Weyers

Application of secondary electron dopant contrast imaging to InP/InGaAsP laser structures

C P Sealy

M R Castell

C L Reynolds

P R Wilshaw

Degradation of electron-beam-pumped Zn(1-x)Cd(x)Se/ZnSe GRINSCH blue-green lasers

J M Bonard

J-D Ganiere

D Herve

L Vanzetti

J J Paggel

L Sorba

E Molva

A Franciosi

Degradation dynamics of II-VI (ZnCdSe) quantum well materials using confocal photoluminescence microscopy

D T Fewer

C Jordan

S J Hewlett

E M McCabe

F P Logue

J F Donegan

J Hegarty

S Taniguchi

T Hino

K Nakano

A Ishibashi

Antiphase boundaries in GaAs/Ge solar cells

C Hardingham

D B Holt

L Lazzarini

M Mazzer

L Nasi

B Raza

C Zanotti-Fregonara

EBIC and cathodoluminescence studies of grain boundary and interface phenomena in CdTe/CdS solar cells

S A Galloway

P R Edwards

K Durose

A study of the activation of CdTe/CdS thin film solar cells using OBIC

P R Edwards

S A Galloway

P R Wilshaw

K Durose

REBIC studies of electrical barriers in varistor ZnO

D Halls

D B Holt

C Leach

J D Russell

Electron microscopy analysis of the RGTO technique for high sensitivity gas sensor development

A Dieguez

A Romano-Rodriguez

J R Morante

P Nelli

L E Depero

L Sangaletti

G Sberveglieri

Scanning probe microscopy

Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies

I Goldfarb

J H G Owen

P T Hayden

K Miki

G A D Briggs

Measurement of silicon wafer roughness by atomic force microscopy: an interlaboratory comparison

A J Pidduck

A B J Smout

P Wagner

M Suhren

D C Gupta

S Yang

AFM investigations of the influence of the doping process on the structure of LPCVD-silicon films

H Gold

J Lutz

F Kuchar

M Pippan

H Noll

Structural studies of InGaAsP/InP-based lasers using cross-sectional atomic-force microscopy (XAFM) and selective etching

T Kallstenius

U Smith

B Stoltz

A k-space transport analysis of the BEEM spectroscopy of Au/Si Schottky barriers

U Hohenester

P Kocevar

P de Andres

F Flores

A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

R L Van Meirhaeghe

G M Vanalme

L Goubert

F Cardon

P Van Daele

Advanced scanning electron and optical microscopy

Carrier recombination at defects in silicon: the effect of transition metals and hydrogen passivation

P R Wilshaw

A M Blood

C F Braban

EBIC studies of the electrical barriers in striated ZnS platelets exhibiting the anomalous photovoltaic effect

D B Holt

Y Brada

A reassessment of Te-doped GaAs

C Frigeri

J L Weyher

J Jimenez

P Martin

REBIC studies of grain boundaries in II-VI compounds

D B Holt

B Raza

A Wojcik

Dependence of electron-hole generation function on EBIC contrast of defects

M J Romero

D Araujo

R Garcia

Cathodoluminescence and EBIC of 2D junction laser structures on patterned (311)A GaAs substrates

C E Norman

A J North

J H Burroughes

T Burke

D A Ritchie

Distinction of the recombination properties and identification of Y luminescence at glide dislocations in CdTe

J Schreiber

H Uniewski

S Hildebrandt

L Horing

H S Leipner

The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wires

G M Williams

M Steer

A G Cullis

C R Whitehouse

M S Skolnick

J S Roberts

Cathodoluminescence studies of striated ZnS platelets and related II-VI crystals

Y Brada

D B Holt

S Mardix

Cathodoluminescence study of ZnMgSSe/GaAs heterostructures

Q Liu

A Meinert

E Kubalek

H Kalisch

M Heuken

H Lakner

Electric field dependence of the lateral cathodoluminescence intensity and electron-beam induced current distribution in a GaAs-AlAs single quantum well

U Jahn

J Menniger

H Kostial

R Hey

H T Grahn

SEM-CL of high quality polycrystalline CVD and high pressure synthetic diamond

S J Sharp

A T Collins

Recombination properties of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures: a cathodoluminescence study

N Fossaert

S Dassonneville

B Sieber

J L Lorriaux

Low temperature spectral cathodoluminescence study of InGaAs/InP quantum dot-like and quantum wire-like structures

C Zanotti-Fregonara

C Rigo

A Stano

G Salviati

Advanced scanning near-field optical microscopy of semiconducting materials and devices

R M Cramer

R Heiderhoff

J Selbeck

L J Balk

Non-destructive measurement of bulk inhomogeneities in silicon using the scanning infra-red microscope

L Mule' Stagno

A Bazzali

M Olmo

P Torok

R Falster

P Fraundorf

Subject Index

Author Index