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E. I. Givargizov has written 5 work(s)
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Cover for 9781468416916 Cover for 9789027721723 Cover for 9789401081610 Cover for 9780306181139 Cover for 9780306181146 Cover for 9780306181153 Cover for 9780306181177 Cover for 9780306181191 Cover for 9780306181207 Cover for 9780306181214 Cover for 9780306431227
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Product Description: For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E. S. Fedorov. Immediate­ ly after the jubilee meeting (May 21-24, 1969), the Fedorov All-Union Symposium on Crystal Growth was held, and the proceedings of that symposium constitute Volume 9 of Growth of Crystals...read more

Paperback:

9781468416916 | Springer Verlag, July 8, 2012, cover price $99.00 | About this edition: For 50 years the Fedorov Institute of Crystallography, Mineralogy, and Petrography at Leningrad Mining Institute has held annual memorial meetings for E.

Paperback:

9781489925626 | Reprint edition (Springer Verlag, September 27, 2013), cover price $259.00

cover image for 9789401081610
Product Description: Anisotropy, i.e., the dependence of structure and properties on direction in space, is the most striking characteristic of crystals. Anisotropy is a result of the discrete nature of the crystal lattice, and it is the characteristic which distinguishes the crystalline state from another solid state of matter, the amorphous...read more

Hardcover:

9789027721723 | Springer Verlag, January 1, 1987, cover price $319.00 | About this edition: Anisotropy, i.

Paperback:

9789401081610 | Springer Verlag, October 5, 2011, cover price $319.00 | About this edition: Anisotropy, i.

cover image for 9780306181214
In keeping with tradition, this collection covers three principal crystallization methods: from the vapor, solution, and the melt. The five articles of the first part are concerned with heterostructure formation. O. P. Pchelyakov and L. V. Sokolov report on controlled growth of nanostructures in the Si-Ge system using an array of modern analytical tools to follow the process in situ. A different method for growing quantum-sized Si-Ge structures is used by Mil'vidskii et al., chemical deposition of hydrides from the vapor. Stresses and misfit dislocations in the resulting heterostructures are thoroughly investigated. The theoretical work of E. M. Trukhanov examines the formation mechanism of long-range stresses that produce r -shaped cracks during the growth of thick Ge-Si films. The reasons for the manifestation of macro defects connected with the generation of twins in HgCdTe films are unraveled by Yu. G. Sidorov et al. The conditions under which films with a low defect density grow are found. The preparation of highly oxidized amorphous Nb films and the structures formed during the crystallization of these films are reported by A. A. Sokol et al. Growth from solutions is the subject of the four articles in the second part.
By E. I. Givargizov (editor)

Hardcover:

9780306181207 | Plenum Pub Corp, March 1, 1996, cover price $199.00 | About this edition: In keeping with tradition, this collection covers three principal crystallization methods: from the vapor, solution, and the melt.
9780306181191 | Plenum Pub Corp, December 1, 1993, cover price $99.00 | About this edition: Volume 19 includes articles on growth of crystals from the vapor, from the melt, and from fluxes, as well as a section on actual structure of crystals and films relative to growth conditions.
9780306181184 | Plenum Pub Corp, August 1, 1992, cover price $99.00
9780306181177 | Plenum Pub Corp, April 1, 1991, cover price $99.00 | About this edition: This volume, as the previous ones, consists primarily of review artic1es.
9780306181153 | Plenum Pub Corp, August 1, 1988, cover price $99.00 | About this edition: The present volume of this series, following the tradition of the previous volumes, covers three major lines of research on crystallization: growth from vapor and epitaxy, growth from solution, and growth from melt.
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